power transistors 1 publication date: april 2003 sjd00177bed 2SD1261, 2SD1261a silicon npn triple diffusion planar type darlington for power amplification complementary to 2sb0938, 2sb0938a features ? high forward current transfer ratio h fe ? high-speed switching ? n type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. absolute maximum ratings t c = 25 c unit: mm parameter symbol rating unit collector-base voltage 2SD1261 v cbo 60 v (emitter open) 2SD1261a 80 collector-emitter voltage 2SD1261 v ceo 60 v (base open) 2SD1261a 80 emitter-base voltage (collector open) v ebo 5v collector current i c 4a peak collector current i cp 8a collector power dissipation p c 40 w t a = 25 c 1.3 junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c 8.5 0.2 3.4 0.3 1.0 0.1 0 to 0.4 6.0 0.2 0.8 0.1 r = 0.5 r = 0.5 1.0 0.1 0.4 0.1 (8.5) (6.5) (6.0) 1.3 (1.5) (7.6) 2.54 0.3 1.4 0.1 5.08 0.5 123 1.5 0.1 2.0 0.5 10.0 0.3 1.5 +0 ?0.4 3.0 +0.4 ?0.2 4.4 0.5 4.4 0.5 14.4 0.5 1: base 2: collector 3: emitter n-g1 package note) self-supported type package is also prepared b c e internal connection
2SD1261, 2SD1261a 2 sjd00177bed electrical characteristics t c = 25 c 3 c note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * : rank classification parameter symbol conditions min typ max unit collector-emitter voltage 2SD1261 v ceo i c = 30 ma, i b = 0 60 v (base open) 2SD1261a 80 base-emitter voltage v be v ce = 3 v, i c = 3 a 2.5 v collector-base cutoff current 2SD1261 i cbo v cb = 60 v, i e = 0 200 a (emitter open) 2SD1261a v cb = 8 0 v, i e = 0 200 collector-emitter cutoff 2SD1261 i ceo v ce = 3 0 v, i b = 0 500 a current (base open) 2SD1261a v ce = 4 0 v, i b = 0 500 emitter-base cutoff current (collector open) i ebo v eb = 5 v, i c = 0 2 ma forward current transfer ratio h fe1 v ce = 3 v, i c = 0.5 a1 000 ? h fe2 * v ce = 3 v, i c = 3 a1 000 10 000 collector-emitter saturation voltage v ce(sat) i c = 3 a, i b = 12 ma 2.0 v i c = 5 a, i b = 20 ma 4.0 v transition frequency f t v ce = 10 v, i c = 0.5 a, f = 1 mhz 20 mhz turn-on time t on i c = 3 a 0.5 s strage time t stg i b1 = 12 ma, i b2 = ? 12 ma 4.0 s fall time t f v cc = 50 v 1.0 s rank r q p h fe2 1 000 to 2500 2 000 to 5 000 4 000 to 10 000
2SD1261, 2SD1261a 3 sjd00177bed v ce(sat) ? i c h fe ? i c c ob ? v cb p c ? t a i c ? v ce i c ? v be 0 160 40 120 80 0 10 20 30 40 50 collector power dissipation p c ( w ) ambient temperature t a ( c ) (1)t c =ta (2)with a 50 50 2mm al heat sink (3)without heat sink (p c =1.3w) (1) (2) (3) 010 24 8 6 0 2 4 6 10 8 collector current i c ( a ) collector-emitter voltage v ce ( v ) i b =4.0ma t c =25?c 3.5ma 3.0ma 2.5ma 2.0ma 1.5ma 1.0ma 0.5ma 0 2 4 6 10 8 0 3.2 0.8 2.4 1.6 base-emitter voltage v be ( v ) collector current i c ( a ) v ce =3v t c =100?c ?5?c 25?c 0.01 0.01 0.1 1 10 100 0.1 1 10 collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( a ) i c /i b =250 t c =100?c 25?c ?5?c 0.01 0.1 1 10 10 10 2 10 3 10 4 10 5 forward current transfer ratio h fe collector current i c ( a ) v ce =3v 25?c ?5?c t c =100?c 0.1 1 10 100 1 10 collector output capacitance (common base, input open circuited) c ob (pf) collector-base voltage v cb ( v ) 10 2 10 4 10 3 i e =0 f=1mhz t c =25?c 0.01 1 0.1 1 10 100 10 100 1000 collector current i c ( a ) collector-emitter voltage v ce ( v ) non repetitive pulse t c =25?c i cp i c t=10ms t=300ms t=1ms 2SD1261 2SD1261a safe operation area r th ? t 10 ? 2 10 ? 1 1 10 10 3 10 2 10 3 10 4 10 2 10 1 10 ? 1 10 ? 3 10 ? 2 10 ? 4 time t (s) thermal resistance r th ( c/w) (1) (2) (1)without heat sink (2)with a 50 50 2mm al heat sink
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